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STB35NF10 STP35NF10
N-channel 100V - 0.030 - 40A - D2PAK/TO-220 Low gate charge STripFETTM II Power MOSFET
General features
Type STB35NF10 STP35NF10

VDSS 100V 100V
RDS(on) <0.035 <0.035
ID 40A 40A
3
3 1 2
Exceptional dv/dt capability 100% avalanche tested Application oriented characterization
TO-220
1
D2PAK
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STB35NF10T4 STP35NF10 Marking B35NF10 P35NF10 Package D
2PAK
Packaging Tape & reel Tube
TO-220
June 2006
Rev 4
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www.st.com 14
Contents
STB35NF10 - STP35NF10
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STB35NF10 - STP35NF10
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor Value 100 100 20 40 28 160 115 0.77 13 300 -55 to 175 Max. operating junction temperature Unit V V V A A A W W/C V/ns mJ C
Ptot
(2) (3)
dv/dt EAS
Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature
Tstg Tj
1. Pulse width limited by safe operating area. 2. ISD 35A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX 3. Starting Tj = 25 C, ID = 20A, VDD = 80V
Table 2.
Rthj-case Rthj-amb TJ
Thermal data
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1.30 62.5 300 C/W C/W C
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Electrical characteristics
STB35NF10 - STP35NF10
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS =0 VDS = max ratings VDS = max ratings, TC = 125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 17.5A 2 3 0.030 Min. 100 1 10 100 4 0.035 Typ. Max. Unit V A A nA V
IDSS
IGSS VGS(th) RDS(on)
Table 4.
Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 17.5A Min. Typ. 20 1550 220 95 17 60 60 15 55 12 20 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDS = 25V, f = 1MHz, VGS = 0
VDD = 50V, ID = 17.5A RG = 4.7 VGS = 10V (see Figure 12) VDD = 80V, ID = 35A, VGS = 10V (see Figure 13)
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
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STB35NF10 - STP35NF10
Electrical characteristics
Table 5.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 35A, VGS = 0 160 720 9 Test conditions Min. Typ. Max. 40 160 1.5 Unit A A V ns nC A
ISD = 35A, Reverse recovery time di/dt = 100A/s, Reverse recovery charge VDD = 25V, Tj = 150C Reverse recovery current (see Figure 14)
1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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Electrical characteristics
STB35NF10 - STP35NF10
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STB35NF10 - STP35NF10 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
STB35NF10 - STP35NF10
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
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STB35NF10 - STP35NF10
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STB35NF10 - STP35NF10
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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STB35NF10 - STP35NF10
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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Packaging mechanical data
STB35NF10 - STP35NF10
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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STB35NF10 - STP35NF10
Revision history
6
Revision history
Table 6.
Date 21-Jun-2004 26-Jun-2006
Revision history
Revision 3 4 Complete version New template, no content change Changes
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STB35NF10 - STP35NF10
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